MAGNETIC MEMORY

摘要

PROBLEM TO BE SOLVED: To solve the problem of infeasibility of the sure on/off of a MOS transistor(TR) according to the memory state of magnetic tunnel junction(MTJ) elements because of the insufficiency of the MR ratio of the MTJ elements with a magnetic memory of the constitution obtained by connecting the conventional MTJ elements to the gate of the MOS TR. SOLUTION: The constitution in which the two MTJ elements 11 and 12 are connected to the gate of the MOS TR 13 and that the MTJ elements 11 and 12 have a resistance change reverse from that of an external magnetic field.