| 摘要 |
PROBLEM TO BE SOLVED: To provide a new resist having good resistance to a plasma etchant as well as good transparency to light of <=200 nm, particularly 193 nm wavelength. SOLUTION: The photoresist composition contains a resin binder containing a polymer having repeating units of 1) photo-acid labile ester groups present in an amount of about 30-60 mol% of all the units of the polymer and each having an alicyclic group and 2) nitrile groups present in an amount of 20-50 mol% of all the units of the polymer and a photoactive component. The polymer does not substantially contain an aromatic group. |
