| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of manufacturing high-speed operating thin film transistors(TFT) at high reproducibility, without complicated processes steps. SOLUTION: A laser device is used which is composed of a laser, a first optical system for forming a linear irradiation cross section of a laser beam emitted from the laser, and a second optical system for uniformizing the beam intensity over the irradiation cross section of the laser beam.</p> |
