| 摘要 |
PROBLEM TO BE SOLVED: To realize ensuring load short-circuit endurance and reduction of ON-state voltage and input capacitance of a trench gate type IGBT. SOLUTION: In a trench gate type IGBT, a P-type base region is formed in a stripe-shape in the direction perpendicular to the direction of a trench gate. Channel lengths of the respective unit cells are formed to be almost constant, and equal to or shorter than those of the conventional trench IGBT. |
