发明名称 |
POWER SUPPLY METHOD TO DISCHARGE ELECTRODE, HIGH- FREQUENCY PLASMA GENERATION METHOD, AND SEMICONDUCTOR- MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a power supply method to a discharge electrode, a high-frequency plasma generation method, and a semiconductor thin-film manufacturing method that can generate a uniform plasma with large area, and perform uniform treatment to a large substrate or the like in a plasma CVD utilizing a very high frequency(VHF) or the like. SOLUTION: In this power supply method to the discharge electrode for generating a discharge state based on high-frequency power that is fed to the discharge electrode, a high-frequency power supply where high frequencies with a different oscillation frequency are independent each other is used, and the generation of a standing wave is inhibited by difference in the frequency of each power supply. |
申请公布号 |
JP2001274099(A) |
申请公布日期 |
2001.10.05 |
申请号 |
JP20000085281 |
申请日期 |
2000.03.24 |
申请人 |
MITSUBISHI HEAVY IND LTD |
发明人 |
YAMAKOSHI HIDEO;SATAKE KOJI;TAKEUCHI YOSHIAKI;MASHIMA HIROSHI;AOI TATSUFUMI;MURATA MASAYOSHI |
分类号 |
H05H1/46;C23C16/505;H01L21/205;H01L21/302;H01L21/3065 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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