| 摘要 |
PROBLEM TO BE SOLVED: To reduce the cost of a semiconductor light emitting element which consumes less electric power and works under a low voltage. SOLUTION: This semiconductor light emitting element is constituted in such a way that a buffer layer 12 formed by alternately laminating pluralities of AlN layers 12a and In0.2Ga0.8N layers 12b upon one another is provided on a low-resistance silicon substrate 11. Then an n-type gallium nitride semiconductor area 13, a gallium-indium nitride active layer 14, and a p-type gallium nitride semiconductor area 15, are successively formed on the buffer layer 12. In addition, an anode electrode 17 is provided on the semiconductor area 15 and a cathode electrode 18 is provided on the substrate 11. |
