| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method by which an underlayer film can freely be worked without rupturing an etching mask formed on the underlayer film even when a material having a high carbon content is used for the underlayer film. SOLUTION: The pattern forming method has a step for forming an underlayer film having >=80 wt.% carbon atom content on a film to be worked, a step for subjecting the surface of the underlayer film to adhesion promoting treatment or forming an adhesion promoting film on the surface of the underlayer film, a step for forming a middle layer on the surface of the underlayer film subjected to the adhesion promoting treatment or on the surface of the adhesion promoting film, a step for forming a resist film on the middle layer, a step for forming a resist pattern by patternwise exposing the resist film, a step for forming a middle layer pattern by transferring the resist pattern to the middle layer and a step for forming an underlayer film pattern by transferring the middle layer pattern to the underlayer film. |
