| 摘要 |
PROBLEM TO BE SOLVED: To provide a mask for electron beam exposure which is not deformed easily and by which exposure can be executed with high dimension accuracy even in a cleaning process after forming mask holes, and to provide a method of designing a pattern of the same. SOLUTION: A mask pattern is divided into lattice-like regions so as to form a checkered pattern, and each region is formed into two complementary masks. At this time, the lattice size of the checkered pattern is determined based on the material used for the mask, the thickness and pattern size of the mask so that displacement due to stresses applied to each position of the mask is lower than a predetermined value. Subsequently, it is judged that a doughnut pattern is found in each region divided into the lattice-like regions forming the checkered pattern. As a result of the judgement, when no doughnut pattern is found in every lattice-like regions, at this time, the mask pattern is determined to set for two complementary masks. |
