| 摘要 |
PROBLEM TO BE SOLVED: To obtain a system and a method for ashing, in which the interface between the hardened surface layer and the unhardened inner layer of resist can be detected by implanting ions. SOLUTION: Utilizing the fact that the temperature of a wafer 15 increases abruptly at transition from a hardened layer to an unhardened layer during ashing, interface between the hardened layer and the unhardened layer is detected by providing a temperature probe 1 which makes contact with the wafer 15. |
