METHOD OF FORMING INSULATING FILM

摘要

PROBLEM TO BE SOLVED: To impart flat and good embedding characteristics to an oxide film formed through a vacuum ultraviolet light CVD process. SOLUTION: At the formation of the oxide film on a substrate by a vacuum ultraviolet light CVD process, an organic material gas and an additive gas of dinitrogen monoxide and/or oxygen gas (gases) are present together therewith. TEOS or the like is used as the organic material gas. By suitably increasing or decreasing the amount of active oxygen or ozone generated in a vapor phase, step coverage can be controlled. Thus, an SiO2 film can be obtained which has desired planarity and embedding characteristics. The method can be applied suitably to the formation of an interlayer insulating film or protective film in a semiconductor element, such as ULSI which demands high integration density and multilayer structure.