发明名称 DIFFUSION FURNACE
摘要 PROBLEM TO BE SOLVED: To make thickness and concentration of a film formed on a wafer surface uniform by eliminating pressure gradient of the gas ejected from each ejecting hole of a gas feed pipe in a diffusion furnace. SOLUTION: This vertical type diffusion furnace, has a gas feed pipe 8A, in which a plurality of gas ejecting holes 9 of a same hole diameter are arranged at equal intervals, where the gas feed pipe 8A has such structure as the cross sectional area of the gas feed pipe 8A becomes smaller as the position shifts from the lowest end (base bottom), where gas feed opening is located to the upper end (top end).
申请公布号 JP2001274107(A) 申请公布日期 2001.10.05
申请号 JP20000089380 申请日期 2000.03.28
申请人 NEC KYUSHU LTD 发明人 NAGAKURA YUTAKA
分类号 C23C16/40;C23C16/44;C23C16/455;F27B5/16;F27D7/02;H01L21/22;H01L21/31;(IPC1-7):H01L21/22 主分类号 C23C16/40
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