| 摘要 |
PROBLEM TO BE SOLVED: To improve the efficiency of a light emitting diode by limiting the light emission immediately below electrodes. SOLUTION: This light emitting diode is constituted by successively forming an n-type GaAs buffer layer 42, n-type GaAlInP clad layer 43, p-type GaAlInP light emitting layer 44, p-type GaAlInP first clad layer 46, p-type AlInP second clad layer 47, p-type GaInP first current diffusing layer 48, and n-type GaInP current blocking layer 49 on an n-type GaAs substrate 41. Then a current route 54 is formed by circularly removing the inside of the current blocking layer 49, and an electrode window 55 is formed by laminating a p-type GaInP second current diffusing layer 50, a p-type GaAs contact layer 51, and a p-side electrode 53 upon another, and circularly removing the portions of the layer 51 and electrodes 53 immediately above the route 54. Consequently, the light emitting efficiency of this diode can be improved by preventing the electric current from the p-side electrode 53 from flowing immediately below the electrode 53, by intensively supplying the current to the inside of the light emitting layer 44 through the current route 54. |
