| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a MOS field-effect transistor for preventing a minute-line effect generated in process. SOLUTION: A titanium silicide layer 21c is formed on an upper face 13a of a gate electrode 13 in such a state that the top parts 33a and 33b of the first parts 31a and 31b of the sidewalls 41a and 41b are located at a position lower than the upper face 13a of the gate electrode 13. Then, a titanium silicide layer 21c of the upper surface 13a of the gate electrode 13 can be prevented from being connected with the sidewalls 41a and 41b in the titanium silicide layer 21c formation step.
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