| 摘要 |
PROBLEM TO BE SOLVED: To provide a protection circuit for protecting an output circuit or input circuit from the ESD breakdown due to device charging and a semiconductor device which can efficiently protect the output circuit or input circuit from the ESD breakdown due to device charging. SOLUTION: One source or drain of an output MOSFET is connected to an outer terminal, and a p-channel type first protecting MOSFET having a gate connected to a high voltage power terminal. An equal or longer channel length than the output MOSFET is provided between the gate of the output MOSFET and the outer terminal, or an n-channel type second protecting MOSFET having a gate connected to a low voltage power terminal and an equal or longer channel length than the output MOSFET is provided. In the event of the outer terminal discharge due to device charging, one of the protecting MOSFETs turns on and similarly charges can be discharged at the gate of the output MOSFET due to device charging, thus preventing the ESD breakdown.
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