WIRING STRUCTURE, FUSE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEM

摘要

PROBLEM TO BE SOLVED: To form a fine wiring in a self-aligned manner without causing increase in the area of a semiconductor device. SOLUTION: This method has steps of making a plurality of contact holes in the first insulating film, such that the holes are connected to a gap formed in the first insulating film, and forming a first conductive film in the plurality of contact holes and the gap.