| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a thin-film semiconductor device which improves semiconductor characteristics, in addition enhances productivity and lowers the process temperature. SOLUTION: In forming a semiconductor film and a thin-film semiconductor device by a low-temperature process in the order to form the semiconductor film and the thin-film semiconductor device using a simple low-temperature process and to improve the quality, a semiconductor film for channel parts is deposited by an LPCVD apparatus, in which effective exhaustion rate in the reaction chamber is 10 SCCM/mtorr or higher, or the pressure in the reaction chamber at 10 minutes or shorter, after the start of regular operation of a vacuum pumping unit reaches 10-5 torr or lower.
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