| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device without a small concentration of electric field at a corner portion 6 of an activation region 2. SOLUTION: The semiconductor device includes a semiconductor substrate 1, an activation region 2 located on the semiconductor substrate 1 and having a side face 3 and an upper face 4 made up of a central part 5 vertically substantially to the side face 3 and a corner portion 6 having a downward slanted inclination and crossed with the side face 3, a channel region 8 located above the activation region 2 and having a part of the corner portion 6, a first main electrode region 9 and a second main electrode region 10 each located on the active region 2 and adjoining to the corner portion of the channel region 8, a gate oxide film 11 located on the upper face 4 of the activation region 2 and having such a film thickness that the thickness at the corner portion 6 is not less than that of the central part 5, and a control electrode 12 on the channel region 8.
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