| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOSFET array where a high voltage device and a low voltage device are formed on the same substrate. SOLUTION: A method for forming a MOSFET array includes a step for preparing a substrate, a step for forming ac conductor layer on the substrate, a step for injecting dopant species into conductor layer, a step for counter- doping the non-mask part of the doped conductor layer and masking a part of the doped conductor layer and step for forming a depletion conductor region on the substrate. Thus, the substitute of dual gate oxide for MOSFET, in which a high voltage region in the counter-doped part is used for the memory array of DRAM, EDRAM, SRAM and NVRAM and the like, is supplied. |
