发明名称 SILICON RING FOR PLASMA TREATING SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a silicon ring which can focus a generated plasma to a wafer, while making uniform the temperature distribution in the wafer plane. SOLUTION: The silicon ring is arranged on the periphery of a wafer on the side of an electrode for mounting the wafer in a plasma treating system, provided with a power supply section and has self-heating function, and the plasma treating system is provided with the silicon ring.
申请公布号 JP2001274142(A) 申请公布日期 2001.10.05
申请号 JP20000086210 申请日期 2000.03.27
申请人 SHIN ETSU CHEM CO LTD 发明人 GOTO KEIICHI;KAWAI MAKOTO;TAMURA KAZUYOSHI
分类号 H05H1/46;B01J19/08;H01L21/205;H01L21/302;H01L21/3065 主分类号 H05H1/46
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