发明名称 DRY ETCHING METHOD, MICROMACHINING METHOD AND MASK FOR DRY ETCHING
摘要 PROBLEM TO BE SOLVED: To provide a dry etching method required for micromachining a proper shape, a micromachining method and a mask for dry etching. SOLUTION: Etching is performed, using carbon monoxide gas added with a compound gas containing nitrogen as a reaction gas, and using a mask made of tantalum or tantalum nitride.
申请公布号 JP2001274144(A) 申请公布日期 2001.10.05
申请号 JP20000088636 申请日期 2000.03.28
申请人 TDK CORP 发明人 HATTORI KAZUHIRO
分类号 C23F4/00;H01F41/34;H01L21/033;H01L21/302;H01L21/3065;H01L21/318;H01L21/3213;(IPC1-7):H01L21/306 主分类号 C23F4/00
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