| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent a copper wiring from becoming oxidized being exposed from the bottom of a through-hole and increasing the wiring resistance in a resist removal process after forming a through hole reaching a wiring layer, when a silicon nitride film is formed to prevent copper in the wiring layer from being diffused into the interlayer insulating film. SOLUTION: In a semiconductor device having a metal wiring layer buried in a trench made in an interlayer insulating film on a semiconductor substrate, the upper surface of the metal wiring layer is covered with a metal layer having resistance to oxidation and an insulating film containing oxygen is further formed on the upper surface of the metal layer.</p> |
