| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device whose parasitic capacitance can be reduced in such a state that a semiconductor support substrate and a metal frame are electrically separated. SOLUTION: The semiconductor device is provided with two drain islands 3a, 3b separated by a p+ type well region 5 formed from the surface of an n-type semiconductor layer 3 into a depth reaching an insulation layer 2. In the drain islands 3a, 3b, n++ type drain regions 4a, 4b are formed respectively. On the front surface in the p+ type well region 5, two n++ type source regions 6a, 6b are formed. Both gate electrodes 9a, 9b are commonly bonded. The conductivity type of the semiconductor support substrate 1 is a p-type and n-type diffusion layers 29, 29 are formed on the insulation layer 2 of the semiconductor supporting substrate 1 just below the drain islands 3a, 3b, resulting in the formation of pn junctions in the semiconductor supporting substrate 1 and depletion layer 30, 30 in the vicinity of the junctions between the n-type diffusion layers 29, 29 and the semiconductor support substrate 1.
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