SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having an SOI structure, by which a high-quality semiconductor device having a plurality of stable elements can be manufactured at high density on the same substrate. SOLUTION: Oxygen ions are selectively implanted in an SOI substrate having a single-crystal silicon layer 1 of a prescribed thickness on a first embedded SiO2 layer 3a to form a second SiO2 layer 3b embedded in a shallow portion. Subsequently, a deep trench isolation region 4 is formed to isolate a first region 7 from a second region 8. A bipolar transistor is formed on a thick single crystal silicon layer in the first region 7. An SOI-MOS transistor is formed on a thin single crystal silicon layer 8a on the SiO2 layer 3b embedded in the second region 8.