| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and apparatus for manufacturing a semiconductor element which a film with few defects and interface, and which is improved in characteristic and reliability. SOLUTION: The manufacturing method includes an oxide film formation step of supplying a neutral active type of oxygens or oxygen atoms onto a surface of a semiconductor substrate, and a carbide removal step of supplying ozones. Thereafter, a material containing silicon and the oxygen neutral active species or oxygen atoms are supplied to form as silicon oxide film and to manufacture a semiconductor element. An apparatus for manufacturing the element is also provided.
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