| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor having a small leakage current and good element characteristics even if a non-crystalline semiconductor thin film having large unevenness is used for an active layer. SOLUTION: The thin-film transistor comprises an active layer 102 which is formed of a semiconductor thin film and has an unevenness of 10 nm or larger on the surface, gate insulation film 103 formed of a silicon nitride film containing fluorine on the surface of the active layer 102, a gate electrode 104 formed on the gate insulation film 103, and source and drain electrodes 105 electrically connected to the active layer 102.
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