METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To enable improvement of a step difference in surface between a wiring layer and insulating film, even when the amount of recess is made large in order to secure residual thickness of a barrier layer covering the surface of the wiring layer. SOLUTION: A carbon film 15 is formed on a silicon oxide film 14 on an Si substrate 11. Grooves 16 are formed in the silicon oxide and carbon films 14 ands 15. A first TaN film 17 is formed on the carbon film 15 and along the surfaces of the grooves 16. A Cu wiring layer 18 is formed on the first TaN film 17 so as to embed the grooves 16. The surface of the Cu layer 18 is planarized to embed the first TaN layer 17 and Cu layer 18 into the grooves. The surface of the Cu layer 18 is retreated from areas of the surface of the layer 18 other than areas for formation of the wiring layer 18 to form recesses 20. A second TaN layer 19 is formed on the first layer 17 and the Cu layer 18. The surface of the second layer 19 is planarized to cause the carbon film 15 to be exposed. The carbon film 15 is selectively removed to expose the silicon oxide film 14.