发明名称 METHOD FOR MEASURING DIMENSION OF PHOTOMASK
摘要 <p>PROBLEM TO BE SOLVED: To non-destructively and exactly measure the pattern dimensions of a photomask. SOLUTION: In the method for measuring the dimensions of the photomask for measuring the pattern dimensions formed on the photomask, the relations between the resist dimensions at which the dependence on exposure is minimized and the pattern dimensions of the photomask are previously determined by simulation (S1 to 5) and plural samples are subjected to patterning of the resist in actuality under different conditions by using the photomask (S11) and the resist pattern dimensions in the plural patterned samples are respectively measured by an electronic microscope. The dependence on the exposure of the measured resist pattern dimensions is then determined (S12) and the resist photomask at which the dimension change with respect to the change of the exposure is determined (S13 and 14). The determined resist pattern dimensions are compared with the results of the simulation, by which the dimensions of the desired patterns of the photomask used for patterning are determined (S15).</p>
申请公布号 JP2001272771(A) 申请公布日期 2001.10.05
申请号 JP20000087650 申请日期 2000.03.27
申请人 TOSHIBA CORP 发明人 MITSUYOSHI YASURO;KOTANI TOSHIYA
分类号 G01B15/00;G01B15/04;G03F1/68;G03F1/84;(IPC1-7):G03F1/08 主分类号 G01B15/00
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