发明名称 ELECTRODE FORMING METHOD FOR SPHERICAL SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To reduce costs for electrode formation while including facility costs by providing mass-production technology for forming positive and negative electrodes in a granulated spherical semiconductor device. SOLUTION: A contact hole 12 for positive electrode and a contact hole 13 for negative electrode are formed on the surface of a spherical semiconductor device 11 for constituting a solar battery cell provided with a pn bond 7 and a spherical crystal 2 of a p-type semiconductor, and this spherical semiconductor device 11 is immersed in a plating liquid 23. In the state of radiating no light, nonelectrolytic plating treatment is performed and a positive electrode 15 coupled to the p-type semiconductor of the spherical crystal 2 is formed inside the contact hole 12 for positive electrode. Next, the spherical semiconductor device 11 is immersed in the other plating liquid and while generating a photovoltaic power by radiating white light, the negative electrode is formed in a contact hole 13 for negative electrode by nonelectrolytic plating treatment.</p>
申请公布号 JP2001274439(A) 申请公布日期 2001.10.05
申请号 JP20000089071 申请日期 2000.03.28
申请人 NAKADA JOYU 发明人 NAKADA JOYU
分类号 H01L21/288;H01L21/02;H01L29/41;H01L31/04;(IPC1-7):H01L31/04 主分类号 H01L21/288
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