| 摘要 |
<p>PROBLEM TO BE SOLVED: To lessen the influence of stray light by exactly recognizing the deterioration of the resolution of the resist occurring in the stray light and the dependence on exposure likelihood and the degree the deterioration of depth of focus. SOLUTION: The coverage in a region within a distance R from the central coordinates of a test pattern in the method for manufacturing a photomask is defined as C% and after the patterns of the mask for measurement varying in the values of R and C are exposed to the resist, the pattern line widths L formed by varying the values of R and C are measured from the formed resist patterns. The process likelihood in the regions C and R is measured from the values obtained by measuring the exposure of the line widths L and the dependence of the depth of focus. A contour graph is formed by determining the maximum depth of focus at the prescribed exposure likelihood determined from the measured process likelihood as a function of C and R. Where the prescribed maximum depth of focus is necessary, the distance Rn satisfying the same and the range Cn% of the coverage are determined and the patterns are rearranged in such a manner that the region within Rn satisfies Cn% in designing the patterns of the mask.</p> |
