| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor which can increase the operation margin and reduce power consumption of a peripheral circuits of an integrated liquid crystal display, and also provide a method of manufacturing the same. SOLUTION: The thin-film transistor comprises a silicon nitride film 12 formed on a glass substrate 10, polycrystalline silicon film 16 formed on the silicon nitride film 12, gate insulation film 18 formed on the polycrystalline silicon film 16, and a gate electrode 20 formed on the gate insulation film 18. The impurity concentration of the polycrystalline silicon film 16 is gradually increased from the boundary between the polycrystalline silicon film 16 and the gate insulation film 18 toward the boundary between the polycrystalline silicon film 16 and a silicon oxide film 14.
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