| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing an insulating film having a low relative permittivity and for obtaining a highly reliable element. SOLUTION: An insulating film is formed on a substrate by a plasma CVD process with the use of at least one compound selected from among a group, consisting of at least one of vinyl silane compounds expressed by the general formula, where, R1 denotes hydrogen atom, methyl, ethyl, methoxy or ethoxy, F2 denotes methyl, ethyl, methoxy, ethocy, phenyl or vinyl, and R3 denotes methyl, ethyl, methoxy, ethoxy, phenyl or vinyl), a ethylene, acethyene, propylene and propne.
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