发明名称 |
III NITRIDE COMPOUND SEMICONDUCTOR ELEMENT AND ELECTRODE FORMING METHOD |
摘要 |
Formed sequentially on a sapphire substrate (1) are a buffer layer (2) of AlN, a high-carrier-concentration n<+> layer (3) of silicon (Si)-doped GaN, an n-clad layer (4) of Si-doped n-Al0.07Ga0.93N, an n-guide layer (5) of Si-doped n-GaN, a multiple-quantum-well-structure (MQW) active layer (6) alternately laminated with well layers (61) of Ga0.9In0.1N each having a film thickness of about 2 nm and barrier layers (62) of Ga0.97In0.03N each having a film thickness of about 4 nm, a p-guide layer (7) of Mg-doped GaN, a p-clad layer (8) of Mg-doped Al0.07Ga0.93N, and a p-contact layer (9) of Mg-doped GaN. A p-electrode (10), reduced in resistance by heat-treating, is formed of titanium nitride (TiN) or tantalum nitride (TaN) having a film thickness of 50 nm.
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申请公布号 |
WO0173829(A1) |
申请公布日期 |
2001.10.04 |
申请号 |
WO2001JP01178 |
申请日期 |
2001.02.19 |
申请人 |
TOYODA GOSEI CO., LTD.;SHIBATA, NAOKI;UEMURA, TOSHIYA;ASAI, MAKOTO;KOIDE, YASUO;MURAKAMI, MASANORI |
发明人 |
SHIBATA, NAOKI;UEMURA, TOSHIYA;ASAI, MAKOTO;KOIDE, YASUO;MURAKAMI, MASANORI |
分类号 |
C30B29/38;H01L21/205;H01L21/24;H01L21/28;H01L21/285;H01L29/43;H01L33/00;H01L33/06;H01L33/12;H01L33/32;H01L33/40;H01S5/02;H01S5/042;H01S5/323;H01S5/343;(IPC1-7):H01L21/28 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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