发明名称 Giant magneto-resistive device and a fabrication process thereof
摘要 A magneto-resistive magnetic sensor has an overlay-type structure and includes a cap layer on a top surface of a magneto-resistive structure and a pair of electrodes provided on said cap layer with a separation from each other, wherein there is interposed an oxidation-resistant conductive film underneath each electrode, such that the oxidation-resistant conductive film is sandwiched between the cap film and the electrode.
申请公布号 US2001026424(A1) 申请公布日期 2001.10.04
申请号 US20000748919 申请日期 2000.12.27
申请人 FUJITSU LIMITED 发明人 KAMATA CHIKAYOSHI;KISHI HITOSHI
分类号 G01R33/09;G11B5/39;G11B5/40;H01L43/08;H01L43/12;(IPC1-7):G11B5/39 主分类号 G01R33/09
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