SILICON WAFER AND METHOD FOR MANUFACTURING THE SAME

摘要

The present invention provides a silicon wafer doped with boron and nitrogen, wherein boron concentration in a surface layer of a depth of at least 0.2 mu m from a surface of the silicon wafer is 1/2 or less of boron concentration of bulk portion, density of defects having a size of 0.09 mu m or more in the surface layer is 1.0 x 10<14> defects/cm<3> or less, and density of bulk micro defects in the bulk portion after oxygen precipitation heat treatment is 1 x 10<8> to 2 x 10<10> defects/cm<3>, and a method for producing a silicon wafer, which comprises growing a silicon single crystal ingot doped with boron and nitrogen by the Czochralski method, processing the single crystal ingot into a silicon wafer by slicing the ingot, and subjecting the silicon wafer to a heat treatment in a hydrogen-containing atmosphere to out-diffuse boron of wafer surface. Thus, there are provided a silicon wafer that can be used as an alternative of p/p<+> epitaxial wafers and a method for producing the same. <IMAGE>