| 摘要 |
<p>Various methods of inspecting a film on a semiconductor workpiece (12) for a residue (18) are provided. In one aspect, a method of inspecting a film (16) on a semiconductor workpiece (12) wherein the film (16) has a known infrared signature is provided. The method includes heating the workpiece (12) so that the film (16) emits infrared radiation (22, 24) and sensing the infrared radiation (22, 24) emitted from the film (16). The infrared signature of the radiation (22, 24) emitted from the film (16) is compared with the known infrared signature and a signal indicative of a deviation between the infrared signature of the emitted infrared radiation (22, 24) and the known infrared signature is generated. The method enables the rapid and accurate detection of residues (18), such as oxide residues on nitride films.</p> |
