| 摘要 |
<p>The present invention refers to a method for depositing a silicon oxide with a constant doping profile. Usually there is a higher dopant concentration (3) when the first nanometers of BPSG (Bor Phosphorus Silicate Glass) are deposited on a surface (4) of a substrate (1). To avoid this dopang increase a method for stabilizing the gas flow, gas mixing and dopant concentration by bypassing mixed gases (11, 12) outside a reactor (8) is introduced by this invention.</p> |
