发明名称 |
Semiconductor device and the process of manufacturing the semiconductor device |
摘要 |
Disclosed herein is a semiconductor device wherein a thyristor protective element and a trigger element are provided in a semiconductor layer formed on a buried insulating layer, and a trigger electrode (gate) of the thyristor protective element and a back gate of the trigger element are provided in the same p well and electrically connected to each other to thereby drive the thyristor protective element based on a substrate current produced by the breakdown of the trigger element.
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申请公布号 |
US2001025963(A1) |
申请公布日期 |
2001.10.04 |
申请号 |
US20010804193 |
申请日期 |
2001.03.13 |
申请人 |
TASHIRO YOSHIYASU;KASA NOBUHIRO;OKUYAMA KOUSUKE;ISHIZUKA HIROYASU |
发明人 |
TASHIRO YOSHIYASU;KASA NOBUHIRO;OKUYAMA KOUSUKE;ISHIZUKA HIROYASU |
分类号 |
H01L27/04;H01L21/822;H01L21/8238;H01L21/84;H01L27/02;H01L27/092;H01L27/12;H01L29/74;H01L29/786;(IPC1-7):H01L29/74;H01L31/111;H01L21/332 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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