| 发明名称 |
Method of manufacturing hetero-junction bipolar transistor |
| 摘要 |
A method of manufacturing a hetero-junction bipolar transistor including a carbon-doped base layer includes the steps of (a) growing a base layer on an underlying layer through chemical vapor deposition, (b) forming at least one semiconductor layer over the base layer, and (c) then subjecting the base layer to thermal annealing at a temperature of 520° C. to 650° C.
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| 申请公布号 |
US2001026971(A1) |
申请公布日期 |
2001.10.04 |
| 申请号 |
US20010861614 |
申请日期 |
2001.05.22 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
FUJITA KOICHIRO;TAKAHASHI NAOKI |
| 分类号 |
H01L29/73;H01L21/205;H01L21/331;H01L29/205;H01L29/737;(IPC1-7):H01L21/824 |
主分类号 |
H01L29/73 |
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