| 摘要 |
A method fabricating an interconnect. A sacrificial layer is formed on a substrate. The sacrificial is patterned for form an opening, followed by filling the opening with a metal interconnect. The sacrificial layer is removed, and a barrier layer is formed to cover the metal interconnect and the substrate. The barrier layer is conformal to the surface profile of the substrate having a metal interconnect thereon. A dielectric layer is formed on the barrier layer.
|
