| 摘要 |
A semiconductor memory device is designed to speed up the selection of a word line. The semiconductor memory device comprises a plurality of normal row decoders for decoding input row address data for specifying word lines when access is made to those of memory cells of a memory cell array which are other than a redundant row of memory cells, thereby selecting those word lines to which those memory cells that are other than the redundant row of memory cells are connected; a redundant row decoder for specifying that word line to which the redundant row of memory cells is connected when access is made to any memory cell which belongs to the redundant row; decision means for determining whether or not to select a memory cell belonging to the redundant row based on the input row address data and selecting the redundant row decoder when selecting the memory cell belonging to the redundant row; and control means for changing only those word lines which are connected to the normal row decoders from an active state to a standby state based on a decision output of the decision means when the decision means has determined to select a memory cell belonging to the redundant row when changing the word lines connected to the normal row decoders from a standby state to an active state.
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