| 摘要 |
<p>A photolithography apparatus comprises an exposure light source emitting exposure light having a wavelength shorter than 400nm, a reticle on which a pattern original image is formed, an illumination optical system for illuminating the reticle with the light from the exposure light source, a projection optical system for projecting the pattern image outputted from the reticle onto a photosensitive substrate, and an alignment system for aligning the reticle with the photosensitive substrate. At least part of a synthetic quartz glass member constituting the illumination optical system, a synthetic quartz glass member constituting the projection optical system, and the reticle is a synthetic quartz glass member having a loss coefficient of 0.0050 cm-1 or less at a wavelength of 193.4 nm measured after irradiated with 1 104 pulses of an ArF excimer laser beam with an energy density of 0.1 to 200 νJ/cm2.p, containing hydrogen molecules with a concentration of 1 1016 to 2 1018 molecules/cm3, and a loss coefficient of 0.0020 cm-1 or less before the ultraviolet irradiation.</p> |
