Method of forming thin film onto semiconductor substrate

摘要

In a plasma CVD apparatus including a reaction chamber and a susceptor (3) to form a thin film on a semiconductor substrate, a pretreatment step is conducted to form a surface layer (20) on the surface of the susceptor so that the surface layer can prevent the semiconductor (11) substrate from electrostatically adhering to the surface of the susceptor. The pretreatment step includes steps of introducing into the reaction chamber a gas containing, e.g., the same gas as the gas for use in a film-forming treatment, and forming a surface layer on the susceptor surface by a CVD process.