| 摘要 |
<p>An ITO sputtering target, characterized in that it contains SnO2 in an amount ranging from 8.80 to 9.40 wt %. The sputtering target is a target for forming an ITO film having a reduced electrical resistance which can suppress the occurrence of microarc during sputtering and also reduce nodules being produced, and thus allows the stable sputtering operation under constant conditions over the whole life thereof.</p> |
