发明名称 CONCURRENT MULTI-BAND LOW NOISE AMPLIFIER ARCHITECTURE
摘要 The present invention relates to a monolithic, concurrent multi-band low noise amplifier (LNA). The inventive LNA includes a three-terminal active device, such as a transistor with a characteristic transconductance, gm, disposed on a semiconductor substrate. The active device has a control input terminal, an output terminal, and a current source terminal. The amplifier also includes an input impedance matching network system, Zin, and an output load network. Zin simultaneously and independently matches the frequency-dependent input impedance of the three-terminal active device to a predetermined characteristic impedance at two or more discrete frequency bands. The output load network simultaneously provides a voltage gain, Av, to an input signal at the amplifier input at each of the two or more discrete frequency bands.
申请公布号 WO0173942(A2) 申请公布日期 2001.10.04
申请号 WO2001US10487 申请日期 2001.03.28
申请人 CALIFORNIA INSTITUTE OF TECHNOLOGY 发明人 HASHEMI, HOSSEIN;SEYED-ALI, HAJIMIRI
分类号 H03F1/26;H03F1/22;H03F3/191;H03F3/193;H03F3/72;(IPC1-7):H03F1/00 主分类号 H03F1/26
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