发明名称 METHOD FOR PREPARING ZINC OXIDE SEMI-CONDUCTOR MATERIAL
摘要 <p>A method for preparing a zinc oxide semi-conductor material which comprises introducing an organic metal-containing compound containing zinc as the metal to a reaction vessel (1), vaporizing the zinc-containing organic compound and effecting a specific decomposition reaction on a substrate (3), to thereby form a zinc oxide semi-conductor material on the substrate, characterized as employing, as the above zinc-containing organic compound, a zinc-containing organic compound which exhibits a low reactivity with oxygen in a vapor phase under the temperature condition in the reaction vessel (1).</p>
申请公布号 WO0173160(A1) 申请公布日期 2001.10.04
申请号 WO2000JP01876 申请日期 2000.03.27
申请人 TOHOKU TECHNO ARCH CO., LTD.;HAGA, KOICHI 发明人 HAGA, KOICHI
分类号 C23C16/40;C23C16/452;C30B25/02;C30B29/16;H01G9/20;(IPC1-7):C23C16/40;H01L33/00;H01L21/205 主分类号 C23C16/40
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