Method of fabricating a transistor in a semiconductor device

摘要

Forming a semiconductor transistor by embedding the gate electrode into the substrate so that a step difference between the gate electrode and the source or drain region is reduced. Device isolation areas are defined by forming at least two first trenches having a first depth. The gate electrode is formed in a second trench located between the first trenches at a second depth being less than the first depth. A source and a drain are respectively formed between the gate electrode and the device isolation areas. The gate electrically connects the source and drain to form a semiconductor channel in the substrate.