Aluminum alloy used in the production of anodizing layers for components of chemical reactors and/or plasma reactors for producing semiconductor wafers contains magnesium as an alloying addition

摘要

Aluminum alloy contains magnesium as an alloying addition in an amount of 1.4-2.9 %. The sum of all further elements in the alloy is not more than 300 ppm and the concentration of the individual elements does not exceed 40 ppm with the exception of aluminum and magnesium. Preferred Features: The anodizing layers produced have a thickness of 5-300, preferably 25-90 mu m.