| 摘要 |
During production, an emitter opening is formed in an insulating layer (11) deposited on the successive layers of the transistor. The emitter contact (12, 12) is arranged in said opening, covering the edge of the opening in a defined manner. A mesa structure is subsequently etched using the emitter contact (12, 13) as an etching mask. The remaining electrically insulating area (11a) acts as an aperture for electric current which is limited to a central region of the emitter layer (5) and an emitter contact layer (6a, 6b). |
