| 摘要 |
<p>A method for forming a noble metal thin-film containing little impurity residue at high forming rate with an inexpensive material, comprising a step of supplying a material gas (55) containing chlorine into an introduction container (11) having a perforated Cu plate (12), a step of generating a plasma from the material gas (55), a step of etching the perforated plate (12) by the material gas plasma and thereby producing a precursor (13) from the Cu component contained in the perforated plate (12) and chlorine in the material gas (55), a step of producing a plasma from hydrogen gas, a step of exhausting the precursor (13) from the introduction container (11), passing the precursor (13) through a rotational magnetic field, and accelerating and moving the precursor (13) toward a wafer (15), and a step of passing the precursor (13) through the hydrogen gas plasma so as to remove chlorine from the precursor (13) and striking the precursor against the wafer (15) so as to form a Cu thin film (62) on the wafer (15). An apparatus used by the method is also disclosed.</p> |
