| 摘要 |
<p>An annealed SiGeC crystal layer (10), comprising a matrix SiGeC crystal layer (7) relaxed in lattice and almost free from dislocation and SiC microcrystals (6) dispersed in the layer (7), is formed on an Si substrate (1) by heat-annealing an SiGeC crystal layer (8)-deposited Si substrate (1). Then, an Si crystal layer is deposited on an annealed SiGeC crystal layer (10) to form a distorted Si crystal layer (4) with a minimum dislocation.</p> |
